AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure

Biao Gong; Mei Ge; Xiao Wang; Bingjie Ye; Irina Nikolaevna Parkhomenko; Fadei Fadeevich Komarov; Jin Wang; Junjun Xue; Yu Liu; Guofeng Yang

doi:10.1109/LED.2024.3483730

AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure

Biao Gong, Mei Ge, Xiao Wang, Bingjie Ye, Irina Nikolaevna Parkhomenko, Fadei Fadeevich Komarov, Jin Wang, Junjun Xue, Yu Liu, Guofeng Yang

Faststoffysik

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

Originalsprog	Engelsk
Tidsskrift	IEEE Electron Device Letters
Vol/bind	45
Udgave nummer	12
Sider (fra-til)	2335-2338
Antal sider	4
ISSN	0741-3106
DOI	https://doi.org/10.1109/LED.2024.3483730
Status	Udgivet - 1 dec. 2024

Adgang til dokumentet

10.1109/LED.2024.3483730

Citationsformater

AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure. / Gong, Biao; Ge, Mei; Wang, Xiao; Ye, Bingjie; Nikolaevna Parkhomenko, Irina; Fadeevich Komarov, Fadei; Wang, Jin; Xue, Junjun; Liu, Yu; Yang, Guofeng.

I: IEEE Electron Device Letters, Bind 45, Nr. 12, 01.12.2024, s. 2335-2338.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

@article{6e4d09e4572446e5aed6329fbf6774b3,

title = "AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure",

author = "Biao Gong and Mei Ge and Xiao Wang and Bingjie Ye and {Nikolaevna Parkhomenko}, Irina and {Fadeevich Komarov}, Fadei and Jin Wang and Junjun Xue and Yu Liu and Guofeng Yang",

year = "2024",

month = dec,

day = "1",

doi = "10.1109/LED.2024.3483730",

language = "English",

volume = "45",

pages = "2335--2338",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers",

number = "12",

}

TY - JOUR

T1 - AlGaN/GaN HEMT-Based MHM Ultraviolet Phototransistor With Bent-Gate Structure

AU - Gong, Biao

AU - Ge, Mei

AU - Wang, Xiao

AU - Ye, Bingjie

AU - Nikolaevna Parkhomenko, Irina

AU - Fadeevich Komarov, Fadei

AU - Wang, Jin

AU - Xue, Junjun

AU - Liu, Yu

AU - Yang, Guofeng

PY - 2024/12/1

Y1 - 2024/12/1

U2 - 10.1109/LED.2024.3483730

DO - 10.1109/LED.2024.3483730

M3 - Journal article

VL - 45

SP - 2335

EP - 2338

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 12

ER -