Electronic properties of InAs/EuS/Al hybrid nanowires

Chun-Xiao Liu*, Sergej Schuwalow, Yu Liu, Kostas Vilkelis, A. L. R. Manesco, P. Krogstrup, Michael Wimmer

*Corresponding author af dette arbejde

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningpeer review

21 Citationer (Scopus)
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Abstract

We study the electronic properties of InAs/EuS/Al heterostructures as explored in a recent experiment [S. Vaitiekenas et al., Nat. Phys. 17, 43 (2020)], combining both spectroscopic results and microscopic device simulations. In particular, we use angle-resolved photoemission spectroscopy to investigate the band bending at the InAs/EuS interface. The resulting band offset value serves as an essential input to subsequent microscopic device simulations, allowing us to map the electronic wave function distribution. We conclude that the magnetic proximity effects at the Al/EuS as well as the InAs/EuS interfaces are both essential to achieve topological superconductivity at zero applied magnetic field. Mapping the topological phase diagram as a function of gate voltages and proximity-induced exchange couplings, we show that the ferromagnetic hybrid nanowire with overlapping Al and EuS layers can become a topological superconductor within realistic parameter regimes. Our work highlights the need for a combined experimental and theoretical effort for faithful device simulations.

OriginalsprogEngelsk
Artikelnummer014516
TidsskriftPhysical Review B
Vol/bind104
Udgave nummer1
Antal sider8
ISSN2469-9950
DOI
StatusUdgivet - 22 jul. 2021

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