Facet structure of GaAs nanowires grown by molecular beam epitaxy

Simon Oddsson Mariager; Claus Birger Sørensen; Martin Aagesen; Jesper Nygård; Robert Krarup Feidenhans'l; P.R. Willmott

doi:10.1063/1.2769401

Facet structure of GaAs nanowires grown by molecular beam epitaxy

Simon Oddsson Mariager, Claus Birger Sørensen, Martin Aagesen, Jesper Nygård, Robert Krarup Feidenhans'l, P.R. Willmott

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

47 Citationer (Scopus)

Originalsprog	Engelsk
Tidsskrift	Applied Physics Letters
Vol/bind	91
Udgave nummer	8
Sider (fra-til)	083106
ISSN	0003-6951
DOI	https://doi.org/10.1063/1.2769401
Status	Udgivet - 22 aug. 2007

Adgang til dokumentet

10.1063/1.2769401

Citationsformater

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title = "Facet structure of GaAs nanowires grown by molecular beam epitaxy",

author = "Mariager, {Simon Oddsson} and S{\o}rensen, {Claus Birger} and Martin Aagesen and Jesper Nyg{\aa}rd and Feidenhans'l, {Robert Krarup} and P.R. Willmott",

year = "2007",

month = aug,

day = "22",

doi = "10.1063/1.2769401",

language = "English",

volume = "91",

pages = "083106",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Facet structure of GaAs nanowires grown by molecular beam epitaxy

AU - Mariager, Simon Oddsson

AU - Sørensen, Claus Birger

AU - Aagesen, Martin

AU - Nygård, Jesper

AU - Feidenhans'l, Robert Krarup

AU - Willmott, P.R.

PY - 2007/8/22

Y1 - 2007/8/22

U2 - 10.1063/1.2769401

DO - 10.1063/1.2769401

M3 - Journal article

SN - 0003-6951

VL - 91

SP - 083106

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -