Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

L. Hutin; B. Bertrand; E. Chanrion; H. Bohuslavskyi; F. Ansaloni; T. Y. Yang; J. Michniewicz; D. J. Niegemann; C. Spence; T. Lundberg; A. Chatterjee; A. Crippa; J. Li; R. Maurand; X. Jehl; M. Sanquer; M. F. Gonzalez-Zalba; F. Kuemmeth; Y. M. Niquet; S. De Franceschi; M. Urdampilleta; T. Meunier; M. Vinet

doi:10.1109/IEDM19573.2019.8993580

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T. Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y. M. Niquet, S. De FranceschiM. Urdampilleta, T. Meunier, M. Vinet

Faststoffysik

Publikation: Bidrag til bog/antologi/rapport › Konferencebidrag i proceedings › Forskning › peer review

15 Citationer (Scopus)

Abstract

We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.

Originalsprog	Engelsk
Titel	2019 IEEE International Electron Devices Meeting, IEDM 2019
Forlag	IEEE
Publikationsdato	2019
Artikelnummer	8993580
ISBN (Elektronisk)	9781728140315
DOI	https://doi.org/10.1109/IEDM19573.2019.8993580
Status	Udgivet - 2019
Begivenhed	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, USA Varighed: 7 dec. 2019 → 11 dec. 2019

Konference

Konference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Land/Område	USA
By	San Francisco
Periode	07/12/2019 → 11/12/2019
Sponsor	IEEE Electron Devices Society (EDS)

Navn	Technical Digest - International Electron Devices Meeting, IEDM
Vol/bind	2019-December
ISSN	0163-1918

Adgang til dokumentet

10.1109/IEDM19573.2019.8993580

http://arxiv.org/pdf/1912.10884

Citationsformater

Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T. Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, F., Niquet, Y. M., ... Vinet, M. (2019). Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. I 2019 IEEE International Electron Devices Meeting, IEDM 2019 [8993580] IEEE. Technical Digest - International Electron Devices Meeting, IEDM Bind 2019-December https://doi.org/10.1109/IEDM19573.2019.8993580

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. / Hutin, L.; Bertrand, B.; Chanrion, E.; Bohuslavskyi, H.; Ansaloni, F.; Yang, T. Y.; Michniewicz, J.; Niegemann, D. J.; Spence, C.; Lundberg, T.; Chatterjee, A.; Crippa, A.; Li, J.; Maurand, R.; Jehl, X.; Sanquer, M.; Gonzalez-Zalba, M. F.; Kuemmeth, F.; Niquet, Y. M.; De Franceschi, S.; Urdampilleta, M.; Meunier, T.; Vinet, M.

2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE, 2019. 8993580 (Technical Digest - International Electron Devices Meeting, IEDM, Bind 2019-December).

Publikation: Bidrag til bog/antologi/rapport › Konferencebidrag i proceedings › Forskning › peer review

Hutin, L, Bertrand, B, Chanrion, E, Bohuslavskyi, H, Ansaloni, F, Yang, TY, Michniewicz, J, Niegemann, DJ, Spence, C, Lundberg, T, Chatterjee, A, Crippa, A, Li, J, Maurand, R, Jehl, X, Sanquer, M, Gonzalez-Zalba, MF, Kuemmeth, F, Niquet, YM, De Franceschi, S, Urdampilleta, M, Meunier, T & Vinet, M 2019, Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. i 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993580, IEEE, Technical Digest - International Electron Devices Meeting, IEDM, bind 2019-December, 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, USA, 07/12/2019. https://doi.org/10.1109/IEDM19573.2019.8993580

Hutin L, Bertrand B, Chanrion E, Bohuslavskyi H, Ansaloni F, Yang TY et al. Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. I 2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE. 2019. 8993580. (Technical Digest - International Electron Devices Meeting, IEDM, Bind 2019-December). https://doi.org/10.1109/IEDM19573.2019.8993580

Hutin, L. ; Bertrand, B. ; Chanrion, E. ; Bohuslavskyi, H. ; Ansaloni, F. ; Yang, T. Y. ; Michniewicz, J. ; Niegemann, D. J. ; Spence, C. ; Lundberg, T. ; Chatterjee, A. ; Crippa, A. ; Li, J. ; Maurand, R. ; Jehl, X. ; Sanquer, M. ; Gonzalez-Zalba, M. F. ; Kuemmeth, F. ; Niquet, Y. M. ; De Franceschi, S. ; Urdampilleta, M. ; Meunier, T. ; Vinet, M. / Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. 2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE, 2019. (Technical Digest - International Electron Devices Meeting, IEDM, Bind 2019-December).

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title = "Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays",

abstract = "We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.",

author = "L. Hutin and B. Bertrand and E. Chanrion and H. Bohuslavskyi and F. Ansaloni and Yang, {T. Y.} and J. Michniewicz and Niegemann, {D. J.} and C. Spence and T. Lundberg and A. Chatterjee and A. Crippa and J. Li and R. Maurand and X. Jehl and M. Sanquer and Gonzalez-Zalba, {M. F.} and F. Kuemmeth and Niquet, {Y. M.} and {De Franceschi}, S. and M. Urdampilleta and T. Meunier and M. Vinet",

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T1 - Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

AU - Hutin, L.

AU - Bertrand, B.

AU - Chanrion, E.

AU - Bohuslavskyi, H.

AU - Ansaloni, F.

AU - Yang, T. Y.

AU - Michniewicz, J.

AU - Niegemann, D. J.

AU - Spence, C.

AU - Lundberg, T.

AU - Chatterjee, A.

AU - Crippa, A.

AU - Li, J.

AU - Maurand, R.

AU - Jehl, X.

AU - Sanquer, M.

AU - Gonzalez-Zalba, M. F.

AU - Kuemmeth, F.

AU - Niquet, Y. M.

AU - De Franceschi, S.

AU - Urdampilleta, M.

AU - Meunier, T.

AU - Vinet, M.

PY - 2019

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N2 - We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.

AB - We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.

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DO - 10.1109/IEDM19573.2019.8993580

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