Integration of carbon nanotubes with semiconductor technology: fabriction of hybrid devices by III-V molecular beam epitaxy

Søren Stobbe; P.E. Lindelof; J. Nygård

doi:10.1088/0268-1242/21/11/S02

Integration of carbon nanotubes with semiconductor technology: fabriction of hybrid devices by III-V molecular beam epitaxy

Søren Stobbe, P.E. Lindelof, J. Nygård

Kvanteoptik og Fotonik

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

19 Citationer (Scopus)

Abstract

Field-diffect transistors

Originalsprog	Engelsk
Tidsskrift	Semiconductor Science and Technology
Vol/bind	21
Udgave nummer	11
Sider (fra-til)	S10-S16
ISSN	0268-1242
DOI	https://doi.org/10.1088/0268-1242/21/11/S02
Status	Udgivet - 17 okt. 2006

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10.1088/0268-1242/21/11/S02

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Citationsformater

@article{cfedbc506c3611dcbee902004c4f4f50,

title = "Integration of carbon nanotubes with semiconductor technology: fabriction of hybrid devices by III-V molecular beam epitaxy",

abstract = "Field-diffect transistors",

author = "S{\o}ren Stobbe and P.E. Lindelof and J. Nyg{\aa}rd",

year = "2006",

month = oct,

day = "17",

doi = "10.1088/0268-1242/21/11/S02",

language = "English",

volume = "21",

pages = "S10--S16",

journal = "Semiconductor Science and Technology",

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}

TY - JOUR

T1 - Integration of carbon nanotubes with semiconductor technology

T2 - fabriction of hybrid devices by III-V molecular beam epitaxy

AU - Stobbe, Søren

AU - Lindelof, P.E.

AU - Nygård, J.

PY - 2006/10/17

Y1 - 2006/10/17

N2 - Field-diffect transistors

AB - Field-diffect transistors

U2 - 10.1088/0268-1242/21/11/S02

DO - 10.1088/0268-1242/21/11/S02

M3 - Journal article

SN - 0268-1242

VL - 21

SP - S10-S16

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 11

ER -