Abstract
We report a method for integrating GaAswaveguide circuits containing self-assembled quantum dots on a Si/SiO2 wafer, using die-to-wafer bonding. The large refractive-index contrast between GaAs and SiO2 enables fabricating single-mode waveguides without compromising the photon-emitter coupling. Anti-bunched emission from individual quantum dots is observed, along with a waveguide propagation loss
Originalsprog | Engelsk |
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Tidsskrift | Optics Express |
Vol/bind | 30 |
Udgave nummer | 21 |
Sider (fra-til) | 37595-37602 |
Antal sider | 8 |
ISSN | 1094-4087 |
DOI | |
Status | Udgivet - 10 okt. 2022 |