Low temperature transport in p-doped InAs nanowires

Shivendra Upadhyay; Thomas Sand Jespersen; Morten Hannibal Madsen; Peter Krogstrup; Jesper Nygård

doi:10.1063/1.4825275

Low temperature transport in p-doped InAs nanowires

Shivendra Upadhyay, Thomas Sand Jespersen, Morten Hannibal Madsen, Peter Krogstrup, Jesper Nygård

Faststoffysik

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

6 Citationer (Scopus)

Abstract

We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

Originalsprog	Engelsk
Artikelnummer	162104
Tidsskrift	Applied Physics Letters
Vol/bind	103
Udgave nummer	16
Antal sider	6
ISSN	0003-6951
DOI	https://doi.org/10.1063/1.4825275
Status	Udgivet - 1 okt. 2013

Adgang til dokumentet

10.1063/1.4825275

Citationsformater

@article{9e4f2d48cc2c45d3ba2da54c3dc5f25a,

title = "Low temperature transport in p-doped InAs nanowires",

abstract = "We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.",

author = "Shivendra Upadhyay and Jespersen, {Thomas Sand} and Madsen, {Morten Hannibal} and Peter Krogstrup and Jesper Nyg{\aa}rd",

year = "2013",

month = oct,

day = "1",

doi = "10.1063/1.4825275",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "16",

}

TY - JOUR

T1 - Low temperature transport in p-doped InAs nanowires

AU - Upadhyay, Shivendra

AU - Jespersen, Thomas Sand

AU - Madsen, Morten Hannibal

AU - Krogstrup, Peter

AU - Nygård, Jesper

PY - 2013/10/1

Y1 - 2013/10/1

N2 - We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

AB - We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

U2 - 10.1063/1.4825275

DO - 10.1063/1.4825275

M3 - Journal article

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 162104

ER -