Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode

Amirhasan Nourbakhsh; Mirco Cantoro; Afshin Hadipour; Tom Vosch; Marleen H. van der Veen; Marc M. Heyns; Bert F.  Sels; Stefan De Gendt

doi:10.1063/1.3495777

Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode

Amirhasan Nourbakhsh, Mirco Cantoro, Afshin Hadipour, Tom Vosch, Marleen H. van der Veen, Marc M. Heyns, Bert F. Sels, Stefan De Gendt

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

27 Citationer (Scopus)

Originalsprog	Engelsk
Tidsskrift	Applied Physics Letters
Vol/bind	97
Udgave nummer	16
Sider (fra-til)	163101
Antal sider	3
ISSN	0003-6951
DOI	https://doi.org/10.1063/1.3495777
Status	Udgivet - 18 okt. 2010

Adgang til dokumentet

10.1063/1.3495777

http://apl.aip.org/resource/1/applab/v97/i16/p163101_s1

Citationsformater

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title = "Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode",

author = "Amirhasan Nourbakhsh and Mirco Cantoro and Afshin Hadipour and Tom Vosch and {van der Veen}, {Marleen H.} and Heyns, {Marc M.} and Sels, {Bert F.} and {De Gendt}, Stefan",

year = "2010",

month = oct,

day = "18",

doi = "10.1063/1.3495777",

language = "English",

volume = "97",

pages = "163101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode

AU - Nourbakhsh, Amirhasan

AU - Cantoro, Mirco

AU - Hadipour, Afshin

AU - Vosch, Tom

AU - van der Veen, Marleen H.

AU - Heyns, Marc M.

AU - Sels, Bert F.

AU - De Gendt, Stefan

PY - 2010/10/18

Y1 - 2010/10/18

U2 - 10.1063/1.3495777

DO - 10.1063/1.3495777

M3 - Journal article

SN - 0003-6951

VL - 97

SP - 163101

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -