Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Joon Sue Lee; Sukgeun Choi; Mihir Pendharkar; Dan J. Pennachio; Brian Markman; Micheal Seas; Sebastian Koelling; Marcel A. Verheijen; Lucas Casparis; Karl D. Petersson; Ivana Petkovic; Vanessa Schaller; Mark J. W. Rodwell; Charles M. Marcus; Peter Krogstrup; Leo P. Kouwenhoven; Erik P. A. M. Bakkers; Chris J. Palmstrom

doi:10.1103/PhysRevMaterials.3.084606

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

Joon Sue Lee, Sukgeun Choi, Mihir Pendharkar, Dan J. Pennachio, Brian Markman, Micheal Seas, Sebastian Koelling, Marcel A. Verheijen, Lucas Casparis, Karl D. Petersson, Ivana Petkovic, Vanessa Schaller, Mark J. W. Rodwell, Charles M. Marcus, Peter Krogstrup, Leo P. Kouwenhoven, Erik P. A. M. Bakkers, Chris J. Palmstrom

Faststoffysik

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

56 Citationer (Scopus)

30 Downloads (Pure)

Originalsprog	Engelsk
Artikelnummer	084606
Tidsskrift	Physical Review Materials
Vol/bind	3
Udgave nummer	8
Antal sider	12
ISSN	2475-9953
DOI	https://doi.org/10.1103/PhysRevMaterials.3.084606
Status	Udgivet - 26 aug. 2019

Bibliografisk note

[Qdev]

Adgang til dokumentet

10.1103/PhysRevMaterials.3.084606Licens: CC BY-NC

PhysRevMaterials.3.084606Forlagets udgivne version, 5,04 MB

https://arxiv.org/ftp/arxiv/papers/1808/1808.04563.pdf

Citationsformater

Lee, J. S., Choi, S., Pendharkar, M., Pennachio, D. J., Markman, B., Seas, M., Koelling, S., Verheijen, M. A., Casparis, L., Petersson, K. D., Petkovic, I., Schaller, V., Rodwell, M. J. W., Marcus, C. M., Krogstrup, P., Kouwenhoven, L. P., Bakkers, E. P. A. M., & Palmstrom, C. J. (2019). Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces. Physical Review Materials, 3(8), [084606]. https://doi.org/10.1103/PhysRevMaterials.3.084606

Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces. / Lee, Joon Sue; Choi, Sukgeun; Pendharkar, Mihir; Pennachio, Dan J.; Markman, Brian; Seas, Micheal; Koelling, Sebastian; Verheijen, Marcel A.; Casparis, Lucas; Petersson, Karl D.; Petkovic, Ivana; Schaller, Vanessa; Rodwell, Mark J. W.; Marcus, Charles M.; Krogstrup, Peter; Kouwenhoven, Leo P.; Bakkers, Erik P. A. M.; Palmstrom, Chris J.

I: Physical Review Materials, Bind 3, Nr. 8, 084606, 26.08.2019.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › peer review

Lee, JS, Choi, S, Pendharkar, M, Pennachio, DJ, Markman, B, Seas, M, Koelling, S, Verheijen, MA, Casparis, L, Petersson, KD, Petkovic, I, Schaller, V, Rodwell, MJW, Marcus, CM , Krogstrup, P, Kouwenhoven, LP, Bakkers, EPAM & Palmstrom, CJ 2019, 'Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces', Physical Review Materials, bind 3, nr. 8, 084606. https://doi.org/10.1103/PhysRevMaterials.3.084606

Lee, Joon Sue ; Choi, Sukgeun ; Pendharkar, Mihir ; Pennachio, Dan J. ; Markman, Brian ; Seas, Micheal ; Koelling, Sebastian ; Verheijen, Marcel A. ; Casparis, Lucas ; Petersson, Karl D. ; Petkovic, Ivana ; Schaller, Vanessa ; Rodwell, Mark J. W. ; Marcus, Charles M. ; Krogstrup, Peter ; Kouwenhoven, Leo P. ; Bakkers, Erik P. A. M. ; Palmstrom, Chris J. / Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces. I: Physical Review Materials. 2019 ; Bind 3, Nr. 8.

@article{f93197e1ab1548f2a06829531bc6870f,

title = "Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces",

author = "Lee, {Joon Sue} and Sukgeun Choi and Mihir Pendharkar and Pennachio, {Dan J.} and Brian Markman and Micheal Seas and Sebastian Koelling and Verheijen, {Marcel A.} and Lucas Casparis and Petersson, {Karl D.} and Ivana Petkovic and Vanessa Schaller and Rodwell, {Mark J. W.} and Marcus, {Charles M.} and Peter Krogstrup and Kouwenhoven, {Leo P.} and Bakkers, {Erik P. A. M.} and Palmstrom, {Chris J.}",

note = "[Qdev]",

year = "2019",

month = aug,

day = "26",

doi = "10.1103/PhysRevMaterials.3.084606",

language = "English",

volume = "3",

journal = "Physical Review Materials",

issn = "2475-9953",

publisher = "American Physical Society",

number = "8",

}

TY - JOUR

T1 - Selective-area chemical beam epitaxy of in-plane InAs one-dimensional channels grown on InP(001), InP(111)B, and InP(011) surfaces

AU - Lee, Joon Sue

AU - Choi, Sukgeun

AU - Pendharkar, Mihir

AU - Pennachio, Dan J.

AU - Markman, Brian

AU - Seas, Micheal

AU - Koelling, Sebastian

AU - Verheijen, Marcel A.

AU - Casparis, Lucas

AU - Petersson, Karl D.

AU - Petkovic, Ivana

AU - Schaller, Vanessa

AU - Rodwell, Mark J. W.

AU - Marcus, Charles M.

AU - Krogstrup, Peter

AU - Kouwenhoven, Leo P.

AU - Bakkers, Erik P. A. M.

AU - Palmstrom, Chris J.

N1 - [Qdev]

PY - 2019/8/26

Y1 - 2019/8/26

U2 - 10.1103/PhysRevMaterials.3.084606

DO - 10.1103/PhysRevMaterials.3.084606

M3 - Journal article

VL - 3

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 8

M1 - 084606

ER -