The electrical band-gap energy of porous silicon measured versus sample temperature

Jacob Trier Frederiksen*, Pia Grethe Melcher, E Veje

*Corresponding author af dette arbejde

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    Abstract

    Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ±0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.

    OriginalsprogEngelsk
    TidsskriftJournal of Porous Materials
    Vol/bind7
    Udgave nummer1-3
    Sider (fra-til)271-273
    Antal sider3
    ISSN1380-2224
    DOI
    StatusUdgivet - 2000
    BegivenhedProceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98) - Mallorca, Spanien
    Varighed: 16 mar. 199820 mar. 1998

    Konference

    KonferenceProceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98)
    Land/OmrådeSpanien
    ByMallorca
    Periode16/03/199820/03/1998

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