The electrical band-gap energy of porous silicon measured versus sample temperature

Jacob Trier Frederiksen; Pia Grethe Melcher; E Veje

doi:10.1023/a:1009679930431

The electrical band-gap energy of porous silicon measured versus sample temperature

Jacob Trier Frederiksen^*, Pia Grethe Melcher, E Veje

^*Corresponding author af dette arbejde

Publikation: Bidrag til tidsskrift › Konferenceartikel › Forskning › peer review

6 Citationer (Scopus)

Abstract

Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ±0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.

Originalsprog	Engelsk
Tidsskrift	Journal of Porous Materials
Vol/bind	7
Udgave nummer	1-3
Sider (fra-til)	271-273
Antal sider	3
ISSN	1380-2224
DOI	https://doi.org/10.1023/a:1009679930431
Status	Udgivet - 2000
Begivenhed	Proceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98) - Mallorca, Spanien Varighed: 16 mar. 1998 → 20 mar. 1998

Konference

Konference	Proceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98)
Land/Område	Spanien
By	Mallorca
Periode	16/03/1998 → 20/03/1998

Bibliografisk note

(Ekstern)

Adgang til dokumentet

10.1023/a:1009679930431

Citationsformater

@inproceedings{11330589913f45ed825096b593cbddf5,

title = "The electrical band-gap energy of porous silicon measured versus sample temperature",

abstract = "Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ±0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.",

keywords = "Energy band gap, Photoconductivity, Porous silicon",

author = "Frederiksen, {Jacob Trier} and Melcher, {Pia Grethe} and E Veje",

note = "(Ekstern); Proceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98) ; Conference date: 16-03-1998 Through 20-03-1998",

year = "2000",

doi = "10.1023/a:1009679930431",

language = "English",

volume = "7",

pages = "271--273",

journal = "Journal of Porous Materials",

issn = "1380-2224",

publisher = "Springer Netherlands",

number = "1-3",

}

TY - GEN

T1 - The electrical band-gap energy of porous silicon measured versus sample temperature

AU - Frederiksen, Jacob Trier

AU - Melcher, Pia Grethe

AU - Veje, E

N1 - (Ekstern)

PY - 2000

Y1 - 2000

N2 - Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ±0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.

AB - Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ±0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.

KW - Energy band gap

KW - Photoconductivity

KW - Porous silicon

U2 - 10.1023/a:1009679930431

DO - 10.1023/a:1009679930431

M3 - Conference article

AN - SCOPUS:0033879143

VL - 7

SP - 271

EP - 273

JO - Journal of Porous Materials

JF - Journal of Porous Materials

SN - 1380-2224

IS - 1-3

T2 - Proceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98)

Y2 - 16 March 1998 through 20 March 1998

ER -