Characterization of top-gated Si/SiGe devices for spin qubit applications

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

2 Citations (Scopus)

Original language	English
Title of host publication	2019 SILICON NANOELECTRONICS WORKSHOP (SNW)
Place of Publication	Kyoto, Japan
Publisher	IEEE
Publication date	9 Jun 2019
Pages	111-112
DOIs	https://doi.org/10.23919/SNW.2019.8782944
Publication status	Published - 9 Jun 2019

Series	IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
ISSN	2161-4636

Access to Document

2019 SILICON NANOELECTRONICS WORKSHOP (SNW). Kyoto, Japan : IEEE, 2019. p. 111-112 (IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

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title = "Characterization of top-gated Si/SiGe devices for spin qubit applications",

author = "Fabio Ansaloni and Christian Volk and Anasua Chatterjee and Ferdinand Kuemmeth",

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AU - Ansaloni, Fabio

AU - Volk, Christian

AU - Chatterjee, Anasua

AU - Kuemmeth, Ferdinand

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DO - 10.23919/SNW.2019.8782944

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T3 - IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)

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BT - 2019 SILICON NANOELECTRONICS WORKSHOP (SNW)

PB - IEEE

CY - Kyoto, Japan

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