Abstract
We study dephasing in semiconductor-superconductor structures caused by coupling to a voltage probe. We consider structures where the semiconductor consists of two scattering regions between which partial dephasing is possible. As a particular example we consider a situation with a double barrier junction in the normal region. For a single-mode system we study the conductance both as a function of the position of the Fermi level and as a function of the barrier transparency. At resonance, where the double barrier is fully transparent, we study the suppression of the ideal factor-of-two enhancement of the conductance when a finite coupling to the voltage probe is taken into account.
| Original language | English |
|---|---|
| Journal | Superlattices and Microstructures |
| Volume | 28 |
| Issue number | 1 |
| Pages (from-to) | 67-76 |
| Number of pages | 10 |
| ISSN | 0749-6036 |
| Publication status | Published - 2000 |