Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

L. Hutin; B. Bertrand; E. Chanrion; H. Bohuslavskyi; F. Ansaloni; T. Y. Yang; J. Michniewicz; D. J. Niegemann; C. Spence; T. Lundberg; A. Chatterjee; A. Crippa; J. Li; R. Maurand; X. Jehl; M. Sanquer; M. F. Gonzalez-Zalba; F. Kuemmeth; Y. M. Niquet; S. De Franceschi; M. Urdampilleta; T. Meunier; M. Vinet

doi:10.1109/IEDM19573.2019.8993580

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T. Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y. M. Niquet, S. De FranceschiM. Urdampilleta, T. Meunier, M. Vinet

Condensed Matter Physics

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

16 Citations (Scopus)

Abstract

We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.

Original language	English
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	IEEE
Publication date	2019
Article number	8993580
ISBN (Electronic)	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993580
Publication status	Published - 2019
Event	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: 7 Dec 2019 → 11 Dec 2019

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/Territory	United States
City	San Francisco
Period	07/12/2019 → 11/12/2019
Sponsor	IEEE Electron Devices Society (EDS)

Series	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2019-December
ISSN	0163-1918

Access to Document

10.1109/IEDM19573.2019.8993580

http://arxiv.org/pdf/1912.10884

Cite this

Hutin, L., Bertrand, B., Chanrion, E., Bohuslavskyi, H., Ansaloni, F., Yang, T. Y., Michniewicz, J., Niegemann, D. J., Spence, C., Lundberg, T., Chatterjee, A., Crippa, A., Li, J., Maurand, R., Jehl, X., Sanquer, M., Gonzalez-Zalba, M. F., Kuemmeth, F., Niquet, Y. M., ... Vinet, M. (2019). Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 [8993580] IEEE. Technical Digest - International Electron Devices Meeting, IEDM Vol. 2019-December https://doi.org/10.1109/IEDM19573.2019.8993580

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. / Hutin, L.; Bertrand, B.; Chanrion, E.; Bohuslavskyi, H.; Ansaloni, F.; Yang, T. Y.; Michniewicz, J.; Niegemann, D. J.; Spence, C.; Lundberg, T.; Chatterjee, A.; Crippa, A.; Li, J.; Maurand, R.; Jehl, X.; Sanquer, M.; Gonzalez-Zalba, M. F.; Kuemmeth, F.; Niquet, Y. M.; De Franceschi, S.; Urdampilleta, M.; Meunier, T.; Vinet, M.

2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE, 2019. 8993580 (Technical Digest - International Electron Devices Meeting, IEDM, Vol. 2019-December).

Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review

Hutin, L, Bertrand, B, Chanrion, E, Bohuslavskyi, H, Ansaloni, F, Yang, TY, Michniewicz, J, Niegemann, DJ, Spence, C, Lundberg, T, Chatterjee, A, Crippa, A, Li, J, Maurand, R, Jehl, X, Sanquer, M, Gonzalez-Zalba, MF, Kuemmeth, F, Niquet, YM, De Franceschi, S, Urdampilleta, M, Meunier, T & Vinet, M 2019, Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. in 2019 IEEE International Electron Devices Meeting, IEDM 2019., 8993580, IEEE, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2019-December, 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 07/12/2019. https://doi.org/10.1109/IEDM19573.2019.8993580

Hutin L, Bertrand B, Chanrion E, Bohuslavskyi H, Ansaloni F, Yang TY et al. Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. In 2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE. 2019. 8993580. (Technical Digest - International Electron Devices Meeting, IEDM, Vol. 2019-December). https://doi.org/10.1109/IEDM19573.2019.8993580

Hutin, L. ; Bertrand, B. ; Chanrion, E. ; Bohuslavskyi, H. ; Ansaloni, F. ; Yang, T. Y. ; Michniewicz, J. ; Niegemann, D. J. ; Spence, C. ; Lundberg, T. ; Chatterjee, A. ; Crippa, A. ; Li, J. ; Maurand, R. ; Jehl, X. ; Sanquer, M. ; Gonzalez-Zalba, M. F. ; Kuemmeth, F. ; Niquet, Y. M. ; De Franceschi, S. ; Urdampilleta, M. ; Meunier, T. ; Vinet, M. / Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays. 2019 IEEE International Electron Devices Meeting, IEDM 2019. IEEE, 2019. (Technical Digest - International Electron Devices Meeting, IEDM, Vol. 2019-December).

@inproceedings{7c4a52fab6c24324905b7b9f51fc2109,

title = "Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays",

abstract = "We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.",

author = "L. Hutin and B. Bertrand and E. Chanrion and H. Bohuslavskyi and F. Ansaloni and Yang, {T. Y.} and J. Michniewicz and Niegemann, {D. J.} and C. Spence and T. Lundberg and A. Chatterjee and A. Crippa and J. Li and R. Maurand and X. Jehl and M. Sanquer and Gonzalez-Zalba, {M. F.} and F. Kuemmeth and Niquet, {Y. M.} and {De Franceschi}, S. and M. Urdampilleta and T. Meunier and M. Vinet",

year = "2019",

doi = "10.1109/IEDM19573.2019.8993580",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "IEEE",

booktitle = "2019 IEEE International Electron Devices Meeting, IEDM 2019",

note = "65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

}

TY - GEN

T1 - Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

AU - Hutin, L.

AU - Bertrand, B.

AU - Chanrion, E.

AU - Bohuslavskyi, H.

AU - Ansaloni, F.

AU - Yang, T. Y.

AU - Michniewicz, J.

AU - Niegemann, D. J.

AU - Spence, C.

AU - Lundberg, T.

AU - Chatterjee, A.

AU - Crippa, A.

AU - Li, J.

AU - Maurand, R.

AU - Jehl, X.

AU - Sanquer, M.

AU - Gonzalez-Zalba, M. F.

AU - Kuemmeth, F.

AU - Niquet, Y. M.

AU - De Franceschi, S.

AU - Urdampilleta, M.

AU - Meunier, T.

AU - Vinet, M.

PY - 2019

Y1 - 2019

N2 - We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.

AB - We fabricated linear arrangements of multiple split-gate devices along an SOI mesa, thus forming a 2×N array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spin-dependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundry-compatible Si MOS spin qubits.

U2 - 10.1109/IEDM19573.2019.8993580

DO - 10.1109/IEDM19573.2019.8993580

M3 - Article in proceedings

AN - SCOPUS:85081058881

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2019 IEEE International Electron Devices Meeting, IEDM 2019

PB - IEEE

T2 - 65th Annual IEEE International Electron Devices Meeting, IEDM 2019

Y2 - 7 December 2019 through 11 December 2019

ER -