Abstract
Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
Original language | English |
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Journal | Nano Letters |
Volume | 14 |
Issue number | 3582 |
Pages (from-to) | 3582-3586 |
Number of pages | 4 |
ISSN | 1530-6984 |
DOIs | |
Publication status | Published - 5 May 2014 |