Hole spin coherence in a Ge/Si heterostructure nanowire

Andrew P Higginbotham; Thorvald Wadum Larsen; Jun Yao; Hao Yan; Charles M Lieber; Charles M Marcus; Ferdinand Kuemmeth

doi:10.1021/nl501242b

Hole spin coherence in a Ge/Si heterostructure nanowire

Andrew P Higginbotham, Thorvald Wadum Larsen, Jun Yao, Hao Yan, Charles M Lieber, Charles M Marcus, Ferdinand Kuemmeth

Condensed Matter Physics

Research output: Contribution to journal › Journal article › Research › peer-review

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Abstract

Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.

Original language	English
Journal	Nano Letters
Volume	14
Issue number	3582
Pages (from-to)	3582-3586
Number of pages	4
ISSN	1530-6984
DOIs	https://doi.org/10.1021/nl501242b
Publication status	Published - 5 May 2014

Bibliographical note

Preprint available at http://arxiv.org/abs/1403.2093.

Access to Document

10.1021/nl501242b

Nano Lett 501242b 2014Final published version, 1.83 MB

http://dx.doi.org/10.1021/nl501242b

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Cite this

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abstract = "Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.",

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T1 - Hole spin coherence in a Ge/Si heterostructure nanowire

AU - Higginbotham, Andrew P

AU - Larsen, Thorvald Wadum

AU - Yao, Jun

AU - Yan, Hao

AU - Lieber, Charles M

AU - Marcus, Charles M

AU - Kuemmeth, Ferdinand

N1 - Preprint available at http://arxiv.org/abs/1403.2093.

PY - 2014/5/5

Y1 - 2014/5/5

N2 - Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.

AB - Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.

U2 - 10.1021/nl501242b

DO - 10.1021/nl501242b

M3 - Journal article

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SN - 1530-6984

VL - 14

SP - 3582

EP - 3586

JO - Nano Letters

JF - Nano Letters

IS - 3582

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