Integration of carbon nanotubes with semiconductor technology: fabriction of hybrid devices by III-V molecular beam epitaxy

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Abstract

Field-diffect transistors

Original language	English
Journal	Semiconductor Science and Technology
Volume	21
Issue number	11
Pages (from-to)	S10-S16
ISSN	0268-1242
DOIs	https://doi.org/10.1088/0268-1242/21/11/S02
Publication status	Published - 17 Oct 2006

@article{cfedbc506c3611dcbee902004c4f4f50,

title = "Integration of carbon nanotubes with semiconductor technology: fabriction of hybrid devices by III-V molecular beam epitaxy",

abstract = "Field-diffect transistors",

author = "S{\o}ren Stobbe and P.E. Lindelof and J. Nyg{\aa}rd",

year = "2006",

month = oct,

day = "17",

doi = "10.1088/0268-1242/21/11/S02",

language = "English",

volume = "21",

pages = "S10--S16",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "Institute of Physics Publishing Ltd",

number = "11",

}

TY - JOUR

T1 - Integration of carbon nanotubes with semiconductor technology

T2 - fabriction of hybrid devices by III-V molecular beam epitaxy

AU - Stobbe, Søren

AU - Lindelof, P.E.

AU - Nygård, J.

PY - 2006/10/17

Y1 - 2006/10/17

N2 - Field-diffect transistors

AB - Field-diffect transistors

U2 - 10.1088/0268-1242/21/11/S02

DO - 10.1088/0268-1242/21/11/S02

M3 - Journal article

VL - 21

SP - S10-S16

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 11

ER -