Abstract
Superconducting resonators enable fast characterization and readout of mesoscopic quantum devices. Finding ways to perform measurements of interest on such devices using resonators only is therefore of great practical relevance. We report an experimental investigation of an InAs nanowire multiquantum dot device by probing gigahertz resonators connected to the device. First, we demonstrate accurate extraction of the dc conductance from measurements of the high-frequency admittance. Because our technique does not rely on dc calibration, it could potentially obviate the need for dc measurements in semiconductor qubit devices. Second, we demonstrate multiplexed gate sensing and the detection of charge tunneling on microsecond timescales. The gigahertz detection of dispersive resonator shifts allows rapid acquisition of charge stability diagrams, as well as resolving charge tunneling in the device with a signal-to-noise ratio of up to 15 in 1 mu s. Our measurements show that gigahertz-frequency resonators may serve as a universal tool for fast tuneup and high-fidelity readout of semiconductor qubits.
Original language | English |
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Article number | 014007 |
Journal | Physical Review Applied |
Volume | 16 |
Issue number | 1 |
Number of pages | 8 |
ISSN | 2331-7019 |
DOIs | |
Publication status | Published - 2 Jul 2021 |
Keywords
- SINGLE-ELECTRON
- SPIN
- SILICON
- QUBITS