The electrical band-gap energy of porous silicon measured versus sample temperature

Jacob Trier Frederiksen*, Pia Grethe Melcher, E Veje

*Corresponding author for this work

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    6 Citations (Scopus)

    Abstract

    Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ±0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.

    Original languageEnglish
    JournalJournal of Porous Materials
    Volume7
    Issue number1-3
    Pages (from-to)271-273
    Number of pages3
    ISSN1380-2224
    DOIs
    Publication statusPublished - 2000
    EventProceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98) - Mallorca, Spain
    Duration: 16 Mar 199820 Mar 1998

    Conference

    ConferenceProceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98)
    Country/TerritorySpain
    CityMallorca
    Period16/03/199820/03/1998

    Keywords

    • Energy band gap
    • Photoconductivity
    • Porous silicon

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